The body-tied FinFETs (bulk FinFETs) implemented on bulk Si substrate were characterized through 3-dimensional device simulation. By controlling the doping profile along the vertical fin body, the bulk FinFETs can be scaled down to sub-30 nm. Device characteristics with the body shape were also shown. At a contact resistivity of $1{ imes}10^{-7};{Omega};cm^2$, the device with side metal contact of fin source/drain showed higher drain current by about two. The C-V results were also shown for the first time.