We investigated the crystalline and electrical properties of ZnO thin films for transparent electrode as a function of the oxygen pressures during the deposition. The ZnO thin films were deposited on a flexible teflon substrates by the pulsed laser deposition. From the X-ray diffraction, ZnO films showed c axis oriented ZnO(0002) crystal structure. The FWHM (full width at half maximum) values decreased from $0.51^{circ};to;0.34^{circ}$ as the oxygen pressure increased from 0.1 mTorr to 10.0 mTorr showing the improvement of crystallinity. The resistivity and hall mobility of ZnO film deposited at the oxgen pressure of 0.1 mTorr at $200^{circ}C$ was about $5 imes10^{-4}Omega{cdot}cm;and;20cm^2/V{cdot}s$, respectively. The optical transmittance of the ZnO films on flexible teflon substrate was found to be above $85\%$.