Silicon bipolar transistors (Si-BJT) are widely used in the telecommunication system such as short range wireless control and wireless indoor voice communication system. New modeling method for the internal current source model of Si-BJT is proposed. The proposed method based on new thermal resistance extraction method and new analytical expressions for the current source parameters of Si-BJT. The proposed method can directly extract the model parameters without any optimization procedure which is adopted in the conventional modeling method. The proposed method is applied to 5 finger $0.4 imes20[{mu}m^2]$ and the model shows good prediction of the measured data in $3[\%]$ of errors proving the validity of this method.