By using $45^{circ}$ obliqued evaporation method with electron beam system, uniformly vertical liquid crystal (LC) alignment was achieved. And a high pretilt angles of about $2.5^{circ}$ were measured. Also, it was verified that there are no variations of pretilt angle as a function of $SiO_x$ thin film thickness 20 nm and 50 nm. A good LC alignment states were observed at annealing temperature of $250^{circ}C$. Consequently, the high pretilt angle and the good thermal stability of LC alignment by $45^{circ}$ obliqued electron beam evaporation method on the $SiO_x$ thin film can be achieved.