The influence of $O_2$ partial pressure on saturation mgnetization, coercivity, anisotropy field and effective permeability (over 1GHz) of as-deposited Co-Fe-Al-O thin films, which were fabricated by RF magnetron reactive sputtering method, were investigated. The $Co_{69.9}Fe_{20.5}A_{14.4O_{5.2}$ thin film fabricated at $O_2$ partial pressure of 4% exhibits the best magnetic softness with saturation magnetization 4${$pi}$Ms of 18.1 kG, coercivity of 0.82 Oe, anisotropy field ($H_k$) of Oe, and effective permeability (${mu}_{eff}$) about 1,024 above 1 GHz. the electrical resistivity of Co-Fe-Al-O thin films were increased with increasing $O_2$ partial pressure, the electrical resistivity of $Co_{69.9}Fe_{20.5}A_{14.4O_{5.2}$ thin film with the best soft magnetic properties was 560.7 ${mu}{Omega}$am. Therefore, It is assumed that the good soft magnetic properties of $Co_{69.9}Fe_{20.5}A_{14.4O_{5.2}$ thin film results from high electrical resistivity and large anisotropy field.