Nanoimprint lithography is an emerging technology which has an ability to make patterns under 100nm width. Recently many researches have been focused to develop multilayer patterning function in nanoimprint lithography and aligning method is attracting attention as a key technology. $Moir'{e}$ has been used widely to measure dislocation or deformation of objects and considered one of the best solutions to detect aligning error in nanoimprint lithography. Concentric circular patterns are used to generate a $moir'{e}$ fringe in this paper and aligning offset and direction are extracted from it. Especially this paper shows the difference of fringe equation of $moir'{e}$ which can be obtained in nanoimprint process atmosphere from normal one.