A new reading technology for the ultra-high density data storage device utilizing AFM technology was proposed and its experimental results were discussed in this paper. For the experiments, an about $2{mu}m$ thick conductive polymer layer was spin-coated on the heavily doped n-type Si wafer and an about $0.1{mu}m$ thick PMMA layer was also been spin-coated on it. After then, the $5{ imes}5$ memory way was fabricated by making indents on the surface of the wafer with the heated AFM tip, and the data reading was performed by scanning the surface with the tip biased at 10 V and the measuring the current flowing out at the end of the tip. The experimental results clearly showed that the new data reading technology worked superbly. The current measured was about 0.92 pA at the cell with the indent, and it was not only below 0.31 pA at the cell without the indent, but also at the cell where the indent was erased.