This study explored the possibility of porous Si (PS) formed by indirect electrode anodization used for effective isolation material for radio frequency integrated circuits (RFIC). We investigated the effect of current density and reaction time on the porosity size and depth, and X-ray diffraction of bulk Si and porous Si to evaluate the change in lattice parameter. Porosity size and depth usually increases with an increase in the current density and reaction time. PS increases the lattice parameter of Si compared to the bulk Si which causes the compressive stress of around 8 MPa. PS formed by the method is believed to be suitable for isolation material for RFIC because it is simple process as well as good compatibility to Si VLSI process.