We proposed a PPLN fabrication setup that measures the voltage and current applied to $LiNbO_3$ in real time during application of a DC electric field. Because the duration for transferring a sufficient electron charge to $LiNbO_3$ increases, we are able to control the electron charge flow transferred to $LiNbO_3$ efficiently. We divided the domain inversion process of PPLN into 5 states: Nucleation (state 1), Spread of the domain inversion region under the electrode(state 2), Accumulation of the electron charge at the insulator/$LiNbO_3$ interface(state 3), Domain inversion under the insulator layer after breakdown(state 4), and Lowering the electric field applied to $LiNbO_3$ (state 5). We have found that the Threshold Point is essential for the domain inversion and that the domain inversion process must be stopped within state 3 for the optimum PPLN. Using these results, we could fabricate a stable and reproducible PPLN efficiently.