Lots of integration work has been done in order to miniaturize the devices for communication. To do this work, one of key work is to get miniaturized inductor with high Q factor for RF circuitry. However, it is not easy to get high Q inductor with silicon based substrate in the range of GHz. Although silicon is well known for its good electrical and mechanical characteristics, silicon has many losses due to small resistivity and high permittivity in the range of high frequency. MEMS technology is a key technology to fabricate miniaturized devices and LTCC is one of good substrate materials in the range of high frequency due to its characteristics of high resistivity and low permittivity. Therefore, we proposed and studied to fabricate and analyze the inductor on the LTCC substrate with MEMS fabrication technology as the one of solutions to overcome this problem. We succeeded in fabricating and characterizing the high Q inductor on the LTCC substrate and then compared and analyzed the results of this inductor with that on a silicon and a glass substrate. The inductor on the LTCC substrate has larger Q factor value and inductance value than that on a silicon and a glass substrate. The values of Q factor with the LTCC substrate are 12 at 3 GHz, 33 at 6 GHz, 51 at 7 GHz and the values of inductance is 1.8, 1.5, 0.6 nH in the range of 5 GHz on the silicon, glass, and LTCC substrate, respectively.