This paper presents the resonance characteristics of the ZnO-based FBAR devices with multilayered Bragg reflectors with Cr adhesion layer inserted between $SiO_2$ and W layers. Due to the post- annealing, the return loss ($S_{11}$) and series/parallel quality factor are significantly improved when compared with the non-post annealing. This post-annealing method seems to be a very efficient way to improve the resonance characteristics of FBAR devices.