A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.