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Study of Inhibition Characteristics of Slurry Additives in Copper CMP using Force Spectroscopy
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  • Study of Inhibition Characteristics of Slurry Additives in Copper CMP using Force Spectroscopy
  • Study of Inhibition Characteristics of Slurry Additives in Copper CMP using Force Spectroscopy
저자명
Lee. Hyo-Sang,Philipossian. Ara,Babu. Suryadevara V.,Patri. Udaya B.,Hong. Young-Ki,Economikos. Laertis,Goldstein. Michael
간행물명
Transactions on electrical and electronic materials
권/호정보
2007년|8권 1호|pp.5-10 (6 pages)
발행정보
한국전기전자재료학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

Using a reference slurry, ammonium dodecyl sulfate (ADS), an anionic and environmentally friendly surfactant, was investigated as an alternative to BTA for its inhibition and lubrication characteristics. Results demonstrated that the inhibition efficiency of ADS was superior to that of BTA. Coefficient of friction (COF) was the lowest when the slurry contained ADS. This suggested that adsorbed ADS on the surface provided lubricating action thereby reducing the wear between the contacting surfaces. Temperature results were consistent with the COF and removal rate data. ADS showed the lowest temperature rise again confirming the softening effect of the adsorbed surfactant layer and less energy dissipation due to friction. Spectral analysis of shear force showed that increasing the pad-wafer sliding velocity at constant wafer pressure shifted the high frequency spectral peaks to lower frequencies while increasing the variance of the frictional force. Addition of ADS reduced the fluctuating component of the shear force and the extent of the pre-existing stick-slip phenomena caused by the kinematics of the process and collision event between pad asperities with the wafer. By contrast, in the case of BTA, there were no such observed benefits but instead undesirable effects were seen at some polishing conditions. This work underscored the importance of real-time force spectroscopy in elucidating the adsorption, lubrication and inhibition of additives in slurries in CMP.