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Ambient Oxygen Effects on the Growth of ZnO Thin Films by Pulsed Laser Deposition
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  • Ambient Oxygen Effects on the Growth of ZnO Thin Films by Pulsed Laser Deposition
  • Ambient Oxygen Effects on the Growth of ZnO Thin Films by Pulsed Laser Deposition
저자명
Park. Jae-Young,Kim. Sang-Sub
간행물명
한국재료학회지
권/호정보
2007년|17권 6호|pp.303-307 (5 pages)
발행정보
한국재료학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

ZnO thin films were prepared by pulsed laser deposition on amorphous fused silica substrates at different ambient $O_2$ pressures varying from 0.5 to 500 mTorr, to observe the effect of ambient gas on their crystalline structure, morphology and optical properties. Results of X-ray diffraction, scanning electron microscopy, atomic force microscopy and photoluminescence studies showed that crystallinity, surface features and optical properties of the films significantly depended on the oxygen background pressure during growth. A low oxygen pressure (0.5 mTorr) seems to be suitable for the growth of highly c-axis oriented and smoother films possessing a superior luminescent property. The films grown at the higher $O_2$ pressures (50-500 mTorr) were found to have many defects probably due to an excessive incorporation of oxygen into ZnO lattice. We speculate that the film crystallinity could be affected by the kinetics of atomic arrangement during deposition at the higher oxygen pressures.