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PLD 법에 의한 c-사파이어 기판위의 MnS 박막성장
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  • PLD 법에 의한 c-사파이어 기판위의 MnS 박막성장
저자명
송정환,Song. Jeong-Hwan
간행물명
한국재료학회지
권/호정보
2007년|17권 9호|pp.475-479 (5 pages)
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한국재료학회
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

Pulsed laser deposition was utilized to grow MnS thin films on c-sapphire substrate using a KrF excimer laser at growth temperatures that ranged from room temperature to $700^{circ}C$. The results of X-ray diffraction (XRD) and UV-visible spectroscopy were employed to investigate the structural and optical properties of the MnS films. While the growth rate decreased as $T_s$ increased, the overall quality of the film improved. The highest quality MnS film was obtained at $700^{circ}C$. Variations in the $T_s$ resulted in the MnS films exhibiting different growth mechanisms. The oriented (200) rocksalt MnS film was grown at room temperature. In the case of higher $T_s,;200{sim}500^{circ}C$, the films consisted of mixed phases of rocksalt and wurtzite. The main structure of the films was altered to (111) rocksalt when the temperature was increased to in excess of $600^{circ}C$. This behavior may very well be the result of elements such as surface energy and atomic arrangement during the growth process. The optical band gap of the obtained ${alpha}-MnS$ film was estimated to be 3.32 eV.