In this paper, a circuit analysis of the complementary CMOS active pixel and readout circuit is carried out. Complementary pixel structure which is different from conventional 3TR APS structure is consist of photo diode, reset PMOS, several NMOSs and PMOSs sets for complementary signals. Photo diode is modelled with Medici device program. HSPICE was used to analyze the variation of the signal feature depending on light intensity using $0.5{mu}M$ standard CMOS process. Simulation results show that the output signal range is from 0.8 V to 4.5 V. This signal range increased 135 % output dynamic range compared to conventional 3TR pixel in the condition of 5 V power supply.