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Atomistic simulation and investigation of nanoindentation, contact pressure and nanohardness
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  • Atomistic simulation and investigation of nanoindentation, contact pressure and nanohardness
  • Atomistic simulation and investigation of nanoindentation, contact pressure and nanohardness
저자명
Chen. Chuin-Shan,Wang. Chien-Kai,Chang. Shu-Wei
간행물명
Interaction and multiscale mechanics
권/호정보
2008년|1권 4호|pp.411-422 (12 pages)
발행정보
테크노프레스
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

Atomistic simulation of nanoindentation with spherical indenters was carried out to study dislocation structures, mean contact pressure, and nanohardness of Au and Al thin films. Slip vectors and atomic stresses were used to characterize the dislocation processes. Two different characteristics were found in the induced dislocation structures: wide-spread slip activities in Al, and confined and intact structures in Au. For both samples, the mean contact pressure varied significantly during the early stages of indentation but reached a steady value soon after the first apparent load drop. This indicates that the nanohardness of Al and Au is not affected by the indentation depth for spherical indenters, even at the atomistic scale.