Al-doped p-type ZnO thin films were fabricated by RF magnetron sputtering on n-Si (100) and homo-buffer layers in pure oxygen ambient. ZnO ceramic mixed with 2 wt% $Al_2O_3$ was selected as a sputtering target. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are arranged from $1.66{ imes}10^{16}$ to $4.04{ imes}10^{18};cm^{-2}$, mobilities from 0.194 to $198;cm^2V{-1}s^{-1}$ and resistivities from 0.0963 to $18.4;{Omega}cm$. FESEM cross section images of different parts of a p-type ZnO:Al thin film annealed at $800^{circ}C$ show a compact structure. Measurement for same sample shows that density is $5.40;cm^{-3}$ which is smaller than theoretically calculated value of $5.67;cm^{-3}$. Photoluminescence (PL) spectra at 10 K show a shoulder peak of p-type ZnO film at about 3.117 eV which is ascribed to electron transition from donor level to acceptor level (DAP).