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Solution-Processable Field-Effect Transistors Fabricated Using Aryl Phenoxazine Based Polymers as the Active Layer
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  • Solution-Processable Field-Effect Transistors Fabricated Using Aryl Phenoxazine Based Polymers as the Active Layer
  • Solution-Processable Field-Effect Transistors Fabricated Using Aryl Phenoxazine Based Polymers as the Active Layer
저자명
Yoon. Hye-Seon,Lee. Woo-Hyung,Lee. Ji-Hoon,Lim. Dong-Gun,Hwang. Do-Hoon,Kang. In-Nam
간행물명
Bulletin of the Korean Chemical Society
권/호정보
2009년|30권 10호|pp.2371-2376 (6 pages)
발행정보
대한화학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

Three phenoxazine-based conjugated polymers, namely, the aryl substituted phenoxazine homopolymer (P1) as well as the dimeric phenoxazine-fluorene (P2) and phenoxazine-bithiophene (P3) copolymers, were synthesized via the Ni(0) mediated Yamamoto reaction and the palladium-catalyzed Suzuki coupling reaction. The weight-averaged molecular weights ($M_w$) of P1, P2, and P3 were found to be 27,000, 22,000, and 15,000, respectively, and their polydispersity indices were 3.6, 1.8, and 2.1. All the polymers were soluble in common organic solvents such as chloroform, toluene, and so on. The UV-visible absorption maxima for P1, P2, and P3 in the film state were located at 421, 415 and 426 nm, respectively, and the ionization potentials of the polymers ranged between 4.90 and 5.12 eV. All the studied phenoxazine-based polymers exhibited amorphous behavior, as confirmed by X-ray diffraction (XRD) and atomic force microscopy (AFM) studies. Thin film transistors were fabricated using the top-contact geometry. P1 showed much better thin-film-transistor performance than P2 or P3: A thin film of P1 gave a saturation mobility of 0.81 ${ imes};10^{-3};cm^2V^{-1}s^{-1}$ and an on/off ratio of about $10^2$.