$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.