For the investigation of the mechanism of photoelectric characteristics of a hydrogenated amorphous silicon thin film transistor(a-Si:H TFT), spectral characteristics of various backlights were analyzed in terms of the photon energy at each wavelength. Photon energy spectral characteristics were obtained through the multiplication of each photon energy and spectral intensities of backlights at each wavelength and the total photon energies were obtained by the integration of the photon energy spectrums. From the comparison of the experimental photo leakage current and the calculated photon energy, it was possible to conclude that the absorption of illuminated backlight to a-Si:H layer and the generation of electrons and holes are mainly carried out at the wavelength less than 500 nm as described in previous reports.