The microstructure, voltage-current, capacitance-voltage, and dielectric characteristics of CCT doped Zn/Pr-based varistors were investigated at different sintering temperatures. As the sintering temperature increased, the average grain size increased from 4.3 to 5.1 ${mu}m$ and the sintered density was saturated at 5.81 g $cm^{-3}$. As the sintering temperature increased, the breakdown field decreased from 7,532 to 5,882 V $cm^{-1}$ and the nonlinear coefficient decreased from 46 to 34. As the sintering temperature increased, the donor density, density of interface states, and barrier height decreased in the range of (9.06-7.24)${ imes}10^{17};cm^{-3}$, (3.05-2.56)${ imes}10^{12};cm^{-2}$, and 1.1-0.95 eV, respectively. The dielectric constant exhibited relatively low value in the range of 529.1-610.3, whereas the $tan{delta}$ exhibited a high value in the range of 0.0910-0.1053.