High purity $eta$-SiC powders were synthesized using sol-gel processing. TEOS and phenol resin were used as the starting material for the silicon source and carbon source, respectively. The process turned out to be capable of producing high purity SiC powder purity degree with 99.98 %. However, it was difficult to control the shape and size of $eta$-SiC powders synthesized by sol-gel process. In this study, $eta$-SiC powder with size of $1{sim}5$ um an 30 nm were used as the seeds for $eta$-SiC to control the $eta$-SiC powder morphology. It was found that $eta$-SiC powder seeds was effective to increase the powder average size of synthesized $eta$-SiC using sol-gel process by acting as the preferred growing sites for $eta$-SiC.