Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-step CMP consists of Cu and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the chemical mechanical cleaning(CMC) is performed various conditions as a cleaning process. The CMC process combined mechanical cleaning by friction between a wafer and a pad and chemical cleaning by CMC solution consists of tetramethyl ammonium hydroxide (TMAH) / benzotriazole (BTA). This paper studies the removal of abrasive on the Cu wafer and the cleaning efficiency of CMC process.