In this paper, the design results of a $22.5^{circ}$ diode phase shifter for the RADANT lens and two $11.25^{circ}$, $22.5^{circ}$ dielectric phase shift layers for the diode phase shifter are presented. The amount of phase shift introduced by each dielectric layer depends on the thickness and the shape of the metal strip and the electrical property of the diode. The equivalent circuit model is employed to represent the dielectric phase shift layer, and the simulated result of the equival circuit model is compared with the result of the field simulation. The measured data of the fabricated $11.25^{circ}$, $22.5^{circ}$ dielectric phase shift layer shows about $2^{circ}$ phase shift error.