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Role of Coverage and Vacancy Defect in Adsorption and Desorption of Benzene on Si(001)-2×n Surface
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  • Role of Coverage and Vacancy Defect in Adsorption and Desorption of Benzene on Si(001)-2×n Surface
  • Role of Coverage and Vacancy Defect in Adsorption and Desorption of Benzene on Si(001)-2×n Surface
저자명
Oh. Seung-Chul,Kim. Ki-Wan,Mamun. Abdulla H.,Lee. Ha-Jin,Hahn. Jae-Rayng
간행물명
Bulletin of the Korean Chemical Society
권/호정보
2010년|31권 1호|pp.162-167 (6 pages)
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대한화학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

We investigated the adsorption and desorption characteristics of benzene molecules on $Si(001)-2{ imes}n$ surfaces using a variable-low temperature scanning tunneling microscopy. When benzene was adsorbed on a $Si(001)-2{ imes}n$ surface at a low coverage, five distinct adsorption configurations were found: tight-binding (TB), standard-butterfly (SB), twisted-bridge, diagonal-bridge, and pedestal. The TB and SB configurations were the most dominant ones and could be reversibly interconverted, diffused, and desorbed by applying an electric field between the tip and the surface. The population ratios of the TB and SB configurations were affected by the benzene coverage: at high coverage, the population ratio of SB increased over that of TB, which was favored at low coverage. The desorption yield decreased with increasing benzene coverage and/or density of vacancy defect. These results suggest that the interaction between the benzene molecules is important at a high coverage, and that the vacancy defects modify the adsorption and desorption energies of the benzene molecules on Si(001) surface.