The unique features of spark plasma sintering process are the possibilities of a very fast heating rate and a short holding time to obtain fully dense materials. $eta$-SiC powder with 0, 2, 6, 10 wt% of $alpha$-SiC particles (seeds) and 4 wt% of Al-B-C (sintering aids) were spark plasma sintered at $1700-1850^{circ}C$ for 10 min. The heating rate, applied pressure and sintering atmosphere were kept at $100^{circ}C/min$, 40 MPa and a flowing Ar gas (500 CC/min). Microstructural development of SiC as function of seed content and temperature during spark plasma sintering was investigated quantitatively and statistically using image analysis. Quantitative image analyses on the sintered SiC ceramics were conducted on the grain size, aspect ratio and grain size distribution of SiC. The microstructure of SiC sintered up to $1700^{circ}C$ consisted of equiaxed grains. In contrast, the growth of large elongated SiC grains in small matrix grains was shown in sintered bodies at $1750^{circ}C$ and the plate-like grains interlocking microstructure had been developed by increasing sintering temperature. The introduction of $alpha$-SiC seeds into $eta$-SiC accelerated the grain growth of elongated grains during sintering, resulting in the plate-like grains interlocking microstructure. In the $alpha$-SiC seeds added in $eta$-SiC, the rate of grain growth decreased with $alpha$-SiC seed content, however, bulk density and aspect ratio of grains in sintered body increased.