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A Study of the Ferroelectric Properties of PbZr0.4Ti0.6O3 (PZT) Grains Using Kelvin Force Microscopy Analysis
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  • A Study of the Ferroelectric Properties of PbZr0.4Ti0.6O3 (PZT) Grains Using Kelvin Force Microscopy Analysis
  • A Study of the Ferroelectric Properties of PbZr0.4Ti0.6O3 (PZT) Grains Using Kelvin Force Microscopy Analysis
저자명
Heo. Jin-Hee
간행물명
Transactions on electrical and electronic materials
권/호정보
2010년|11권 6호|pp.275-278 (4 pages)
발행정보
한국전기전자재료학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

We have examined the Ferroelectric properties of $PbZr_{0.4}Ti_{0.6}O_3$ (PZT) grains by monitoring the surface potential through the utilization of Kelvin force microscopy. Hysteretic and time dependent behaviors of small and large grains were compared with each other. The smaller grain yields had smaller values of surface potential. However, the normalized voltage versus surface potential behavior indicates that the smaller grains became saturated earlier with respect to the writing voltages than did the larger grains. On the other hand, the surface potential hysteresis loop obtained from the smaller grains showed a similar shape to what might be obtained from a Zr rich PZT film. In contrast the hysteresis loop of the larger grain looks like that obtained from a Ti-rich film. In addition, the time dependent behaviors of the smaller grains also revealed a better response than the response of larger grains. The overall ferroelectric properties of the smaller grains seem better than corresponding properties for larger grains. The Ti/Zr ratio of the PZT film which was examined in this study was 60/40.