Silicon carbide (SiC) is a candidate material for heat exchangers for VHTR (Very High Temperature Gas Cooled Reactor) due to its refractory nature and high thermal conductivity. This research has focused on demonstration of physical properties and mock-up fabrication for the future heat exchange applications. It was found that the SiC-based components can be applied for process heat exchanger (PHE) and intermediate heat exchanger (IHX), which are operated at $400{sim}1000^{circ}C$, based on our examination for the following aspects: optimum fabrication technologies (design, machining and bonding) for compact design, thermal conductivity, corrosion resistance in sulfuric acid environment at high temperature, and simulation results on heat transferring and thermal stress distribution of heat exchanger mock-up.