In this paper, we propose a high gain, current reused ultra wideband (UWB) low noise amplifier (LNA) that uses TSMC 0.18 ${mu}m$ CMOS technology. To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilized in the first stage. A ${pi}$-type LC network is adopted in the second stage to achieve sufficient gain over the entire frequency band. The proposed UWB LNA has a voltage gain of 12.9~18.1 dB and a noise figure (NF) of 4.05~6.21 dB over the frequency band of interest (1~10 GHz). The total power consumption of the proposed UWB LNA is 10.1 mW from a 1.4 V supply voltage, and the chip area is $0.95{ imes}0.9$ mm.