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Annealing Temperature Dependence on the Physicochemical Properties of Copper Oxide Thin Films
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  • Annealing Temperature Dependence on the Physicochemical Properties of Copper Oxide Thin Films
  • Annealing Temperature Dependence on the Physicochemical Properties of Copper Oxide Thin Films
저자명
Park. J.Y.,Kwon. T.H.,Koh. S.W.,Kang. Y.C.
간행물명
Bulletin of the Korean Chemical Society
권/호정보
2011년|32권 4호|pp.1331-1335 (5 pages)
발행정보
대한화학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

We report the results of the characterization of Cu oxide thin films deposited by radio frequency (r.f.) magnetron sputtering at different annealing temperatures. The deposited Cu oxide thin films were investigated by scanning electron microscopy, spectroscopic ellipsometry, X-ray diffraction, atomic force microscopy, Xray photoelectron spectroscopy, and contact angle measurements. The thickness of the films was about 180 nm and the monoclinic CuO phase was detected. The $CuO_2$ and $Cu(OH)_2$ phases were grown as amorphous phase and the ratio of the three phases were independent on the annealing temperature. The surface of Cu oxide films changed from hydrophilic to hydrophobic as the annealing temperature increased. This phenomenon is due to the increase of the surface roughness. The direct optical band gap was also obtained and laid in the range between 2.36 and 3.06 eV.