The SBN thin films were deposited on Pt/Ti/$SiO_2$/Si and p-type Si(100) substrate by rf magnetron sputtering method using $Sr_{0.7}Bi_{2.3}Nb_2O_9$ ceramic target. SBN thin films deposited were annealed at 600~800[$^{circ}C$] by furnace in oxygen atmosphere during 40min. The polarization characteristics have been investigated to confirm the possibility of the SBN thin films for the application to destructive read out ferroelectric random access memory. The maximum remanent polarization and the coercive voltage are 0.6[${mu}C/cm^2$], 1.2[V] respectively at annealing temperature of 800[$^{circ}C$]. The leakage current density was the $2.57{ imes}10^{-6}[A/cm^2]$ at an applied voltage of 5[V] at annealing temperature of 650[$^{circ}C$]. Also, the fatigue characteristics of SBN thin films did not change up to $10^8$ switching cycles.