본 논문은 첨가제 $SiO_2$를 가지는 3종류의 SiC 세라믹스의 연마판 거칠기에 따르는 균열 치유 연구를 실시하였다. 혼합물은 질소가스 분위기에서 2053 K, 35 MPa, 1시간 동안 소결하였다. SiC 세라믹스 시험편의 최적 균열 치유 조건은 1373 K에서 1시간이다. 균열부의 치유 물질은 SiC와 $O_2$의 산화반응에 의한 유리상 $SiO_2$이다. 최적 치유 조건에서 미연마 SiC 세라믹스의 굽힘 강도는 완전하게 회복되지 않았다. 그러나 SAY, SAYS-1 및 SAYS-2 시험편에서 경제적인 면을 고려하면 1시간 열처리에서 상온 굽힘 강도가 가장 높게 나타난 SAY 시험편이 우수하다. $125;{mu}m$ 연마판의 연마 시험편은 결함의 수나 크기가 줄어들었으나, 열처리 후에도 표면 미세 결함이 완전하게 치유되지 못하였다. $40;{mu}m$ 연마판의 연마 시험편은 1시간 열처리 후 표면 결함이나 기공은 거의 없었으며, 굽힘 강도는 $6;{mu}m$ 연마판 경면 시험편의 강도만큼 회복하였다.
This study was carried out on the crack healing of three types of SiC ceramics based on a $SiO_2$ additive, taking into account the roughness of the polishing plate used for polishing the specimens. The mixtures were subsequently hot-pressed in $N_2$ gas for one hour under 35 MPa at 2053 K. In these specimens, the optimized crack-healing condition was 1373 K for one hour in air. The crack-healing material of the cracked part was the glassy phase of $SiO_2$ that was formed by the oxidation of SiC. In the optimum healing condition, the bending strength of non-polished SiC ceramics was not completely recovered. However, the bending strength of the SAY specimen was excellent, considering the economic aspects of SAY, SAYS-1, and SAYS-2. The SAY specimen is definitely superior to the others after an hour of heat treatment. There was a decrease in the number and size of defects in the specimen polished by using a $125-{mu}m$ polishing plate; however, the micro-surface defects were not completely repaired. The specimen polished by using a 40-${mu}m$ polishing plate showed little voids or surface defects after an hour of heat treatment. The bending strength of the specimen mirror-polished by using a 6-${mu}m$ polishing plate was completely recovered.
