Gas pressure sintering (GPS) of reaction bonded silicon nitride (RBSN) was performed using $Lu_2O_3-SiO_2$ additive and the properties were compared with those of specimens prepared using high purity $Si_3N_4$ powder. The relative density of RBSN and compacted $Si_3N_4$ powder were 68.9 and 47.1%, and total linear shrinkage after sintering at $1900^{circ}C$ were 14.8 and 42.9%, respectively. High nitrogen partial pressure (5MPa) was required during sintering at $1900^{circ}C$ in order to prevent the decomposition of the nitride and to promote the formation of SiC. The relative density and 4-point bending strength of RBSN and $Si_3N_4$ powder compact were 97.7%, 954MPa and 98.2%, 792MPa, respectively, after sintering at $1900^{circ}C$. The sintered RBSN also showed high fracture toughness of 9.2MPam$^{1/2}$.