In order to reduce the indium contents in transparent conducting oxide(TCO) thin films of $In_{1.6{sim}1.8}Zn_{0.2}Sn_{0.2{sim}0.4}O_3$ (IZTO), $In_{1.6}Zn_{0.2}Sn_{0.2}O_{3-{delta}}$(IZTO) was prepared by replacing indium with Zn and Sn. The TCO films were deposited via RF-magnetron sputtering of the IZTO target at various deposition temperatures and its film characteristics were investigated. When deposited in an Ar atmosphere at $400^{circ}C$, the electrical resistivity of the film decreased to $6.34{ imes}10^{-4}{Omega}{cdot}cm$ and the optical transmittance was 80%. As the deposition temperature increased, the crystallinity of the IZTO film was enhanced. As a result, the electrical conductivity and transmittance properties were improved. This demonstrates the possibility of replacing ITO TCO film with IZTO.