An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications

An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications
An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications

ㆍ 저자명: Ghosh. Pujarini,Haldar. Subhasis,Gupta. R.S.,Gupta. Mridula
ㆍ 간행물명: Journal of semiconductor technology and science
ㆍ 권/호정보: 2012년|12권 4호|pp.377-387 (11 pages)
ㆍ 발행정보: 대한전자공학회
ㆍ 파일정보: 정기간행물|ENG|
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ㆍ 주제분야: 기타

이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.

서지반출

기타언어초록

An intrinsic small signal equivalent circuit model of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are then evaluated and justified with the simulated data extracted from 3D device simulation.

키워드

Small signal equivalent circuit short channel effect (SCEs)cylindrical/surrounded gate MOSFET (CGT/SGT)S-parameters Y-parameters unilateral transducer power gain ($U_T$)maximum stable power gain (Gms)maximum unilateral transducer power gain ($G_{TU_{max}}$)

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