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Highly Crystalline 2,6,9,10-Tetrakis((4-hexylphenyl)ethynyl)anthracene for Efficient Solution-Processed Field-effect Transistors
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  • Highly Crystalline 2,6,9,10-Tetrakis((4-hexylphenyl)ethynyl)anthracene for Efficient Solution-Processed Field-effect Transistors
  • Highly Crystalline 2,6,9,10-Tetrakis((4-hexylphenyl)ethynyl)anthracene for Efficient Solution-Processed Field-effect Transistors
저자명
Hur. Jung-A,Shin. Ji-Cheol,Lee. Tae-Wan,Kim. Kyung-Hwan,Cho. Min-Ju,Choi. Dong-Hoon
간행물명
Bulletin of the Korean Chemical Society
권/호정보
2012년|33권 5호|pp.1653-1658 (6 pages)
발행정보
대한화학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

A new anthracene-containing conjugated molecule was synthesized through the Sonogashira coupling and reduction reactions. 1-Ethynyl-4-hexylbenzene was coupled to 2,6-bis((4-hexylphenyl) ethynyl)anthracene-9,10-dione through a reduction reaction to generate 2,6,9,10-tetrakis((4-hexylphenyl)ethynyl) anthracene. The semiconducting properties were evaluated in an organic thin film transistor (OTFT) and a single-crystal field-effect transistor (SC-FET). The OTFT showed a mobility of around 0.13 $cm^2;V^{-1};s^{-1}$ ($I_{ON}/I_{OFF}$ > $10^6$), whereas the SC-FET showed a mobility of 1.00-1.35 $cm^2;V^{-1};s^{-1}$, which is much higher than that of the OTFT. Owing to the high photoluminescence quantum yield of 2,6,9,10-tetrakis((4-hexylphenyl)ethynyl) anthracene, we could observe a significant increase in drain current under irradiation with visible light (${lambda}$ = 538 nm, 12.5 ${mu}W/cm^2$).