$YBa_2Cu_3O_{7-x}$ thin films were fabricated by the spin-coating method on $SiO_2$/Si substrate using an alkoxide-based sol-gel method. The structural and electrical properties were investigated for various 1st annealing temperature. Due to the formation of the polycrystalline single phase, synthesis temperature was observed at around $720^{circ}C-800^{circ}C$. $YBa_2Cu_3O_{7-x}$ thin films with the 1st annealing temperature of $450^{circ}C{sim}500^{circ}C$ showed the single XRD patterns without the second phase, such as $YBa_2Cu_4O_8$. The thickness of films was approximately $0.23{mu}m{sim}0.27{mu}m$. Aerage grain size, resistance and temperature coefficient of resistance (TCR) of $YBa_2Cu_3O_{7-x}$ thin films with the 1st annealing temperature of $500^{circ}C$ were $0.27{mu}m$, $59.7M{Omega}$ and -3.7 %/K, respecvitely.