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Improved Charge Pump with Reduced Reverse Current
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  • Improved Charge Pump with Reduced Reverse Current
  • Improved Charge Pump with Reduced Reverse Current
저자명
Gwak. Ki-Uk,Lee. Sang-Gug,Ryu. Seung-Tak
간행물명
Journal of semiconductor technology and science
권/호정보
2012년|12권 3호|pp.353-359 (7 pages)
발행정보
대한전자공학회
파일정보
정기간행물|ENG|
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기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

A highly efficient charge pump that minimizes the reverse charge sharing current (in short, reverse current) is proposed. The charge pump employs auxiliary capacitors and diode-connected MOSFET along with an early clock to drive the charge transfer switches; this new method provides better isolation between stages. As a result, the amount of reverse current is reduced greatly and the clock driver can be designed with reduced transition slope. As a proof of the concept, a 1.1V-to-9.8 V charge pump was designed in a $0.35{mu}m$ 18 V CMOS technology. The proposed architecture shows 1.6 V ~ 3.5 V higher output voltage compared with the previously reported architecture.