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Encapsulation of Semiconductor Gas Sensors with Gas Barrier Films for USN Application
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  • Encapsulation of Semiconductor Gas Sensors with Gas Barrier Films for USN Application
  • Encapsulation of Semiconductor Gas Sensors with Gas Barrier Films for USN Application
저자명
Lee. Hyung-Kun,Yang. Woo Seok,Choi. Nak-Jin,Moon. Seung Eon
간행물명
ETRI journal
권/호정보
2012년|34권 5호|pp.713-718 (6 pages)
발행정보
한국전자통신연구원
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

Sensor nodes in ubiquitous sensor networks require autonomous replacement of deteriorated gas sensors with reserved sensors, which has led us to develop an encapsulation technique to avoid poisoning the reserved sensors and an autonomous activation technique to replace a deteriorated sensor with a reserved sensor. Encapsulations of $In_2O_3$ nanoparticles with poly(ethylene-co-vinyl alcohol) (EVOH) or polyvinylidene difluoride (PVDF) as gas barrier layers are reported. The EVOH or PVDF films are used for an encapsulation of $In_2O_3$ as a sensing material and are effective in blocking $In_2O_3$ from contacting formaldehyde (HCHO) gas. The activation process of $In_2O_3$ by removing the EVOH through heating is effective. However, the thermal decomposition of the PVDF affects the property of the $In_2O_3$ in terms of the gas reactivity. The response of the sensor to HCHO gas after removing the EVOH is 26%, which is not significantly different with the response of 28% in a reference sample that was not treated at all. We believe that the selection of gas barrier materials for the encapsulation and activation of $In_2O_3$ should be considered because of the ill effect the byproduct of thermal decomposition has on the sensing materials and other thermal properties of the barrier materials.