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Effects of Annealing Temperature on Properties of Al-Doped ZnO Thin Films prepared by Sol-Gel Dip-Coating
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  • Effects of Annealing Temperature on Properties of Al-Doped ZnO Thin Films prepared by Sol-Gel Dip-Coating
  • Effects of Annealing Temperature on Properties of Al-Doped ZnO Thin Films prepared by Sol-Gel Dip-Coating
저자명
Jun. Min-Chul,Koh. Jung-Hyuk
간행물명
Journal of electrical engineering & technology
권/호정보
2013년|8권 1호|pp.163-167 (5 pages)
발행정보
대한전기학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

Aluminum doped zinc oxide (AZO) thin films have been prepared on the glass substrates (Corning 1737) by sol-gel dip-coating method employing zinc acetate and aluminum chloride hexahydrate for the transparent conducting oxide (TCO) applications. 1 at% Al was doped to the ZnO thin films. The effects of post-heating temperature on the crystallization, optical and electrical properties of the AZO films have been investigated. Experimental results showed that post-heating temperature affected the microstructure, electrical resistance, and optical transmittance of the AZO films. From the X-ray diffraction analysis, all films have hexagonal wurtzite crystal structure. Optical transmittance spectra of the AZO films exhibited transmittance higher than about 80% within the visible wavelength region and the optical direct band gap ($E_g$) of these films was increased with increasing post-heating temperature. A minimum resistivity of $2.5{ imes}10^{-3}{Omega}cm$ was observed at $650^{circ}C$.