Enhanced Photoresponse of Plasmonic Terahertz Wave Detector Based on Silicon Field Effect Transistors with Asymmetric Source and Drain Structures

Enhanced Photoresponse of Plasmonic Terahertz Wave Detector Based on Silicon Field Effect Transistors with Asymmetric Source and Drain Structures
Enhanced Photoresponse of Plasmonic Terahertz Wave Detector Based on Silicon Field Effect Transistors with Asymmetric Source and Drain Structures

ㆍ 저자명: Ryu. Min Woo,Kim. Sung-Ho,Kim. Kyung Rok
ㆍ 간행물명: Journal of semiconductor technology and science
ㆍ 권/호정보: 2013년|13권 6호|pp.576-580 (5 pages)
ㆍ 발행정보: 대한전자공학회
ㆍ 파일정보: 정기간행물|ENG|
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ㆍ 주제분야: 기타

이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.

서지반출

기타언어초록

We investigate the enhanced effects of asymmetry ratio variations of the source and drain area in silicon (Si) field-effect transistor (FET). Photoresponse according to the variation of asymmetry difference between the width of source and drain are obtained by using the plasmonic terahertz (THz) wave detector simulation based on technology computer-aided design (TCAD) with the quasi-plasma 2DEG model. The simulation results demonstrate the potential of Si FETs with asymmetric source and drain structures as the promising plasmonic THz detectors.

키워드

Asymmetry photoresponse terahertz wave detector quasi-plasma 2DEG TCAD simulation

다운URL