Off-axis magnetron sputtering was used for the crystallized ITO thin films deposition at various temperatures from 25 to $120^{circ}C$. The ITO thin films were crystallized at $50^{circ}C$ for Si (001) substrates and at $75^{circ}C$ for PET substrate. The ITO thin films grown onto PET substrate at $120^{circ}C$ were crystallized with a (222) preferred orientation. The 160-nm thick ITO films showed a resistivity of about $7{ imes}10^{-4}{Omega}{cdot}cm$ and a transmittance of about 84% at a wavelength of 550 nm. Off-axis sputtering can be applied for low temperature crystallization of the ITO films.