To simulate the effect of high dose-rate radiation on semiconductor devices, device modeling work has been performed especially in the area of photo-current generation by a PIN diode. The resultant analytical values were compared with experimental ones that were specially designed and performed to benchmark the simulation results. Initial results showed 27.85% error between the simulation and the experiment. The error can be further reduced by improvement both in simulation and in related experiments. The developed technique from the study can be applicable to radiation dosimetry and to analysis on the radiation effects in electronics.