Recently, the rapid development of the semiconductor industry induces the prompt technical progress in the area of device integration and the application of large diameter wafers for the price competitiveness. As a result of the usage of large wafers in the semiconductor industry, the silicon carbide components which have layers of silicon carbide on graphite or RBSC substrates is getting widely used due to the advantages of SiC such as high hardness and strength, chemical and ionic resistant to all the environments superior than other ceramic materials. For the uniform and homogeneous deposition of silicon carbide on these huge components, it needs to know about the gas flow in the CVD reactor, not only for the delicate adjustment of the process variables but more essentially for the cost reduction for the shape change of specimens and their holders on the stage of reactor. In this research, the CFD simulation is challenged for the prediction of the inner distribution of the gas velocity. Chemical reaction simulation is used to predict the distribution of concentration of the reacting gas with the rotating velocity of the stage. With the increase of the rotating speed, more uniform distribution of the reacting gas on the surface of the stage was obtained.