This work first introduced Si quantum dots (QDs) for QD-sensitized solar cells (QDSCs). However, the particle size of Si QDs, which had visible light absorption, was relatively large. The paint-type Si QDSC was proposed in this work because Si QDs could not penetrate into nano-porous $TiO_2$ network. Si QDs were synthesized by multi-hollow plasma discharge CVD and mixed with $TiO_2$ paste. For better performance, thickness of Si-$TiO_2$ layer was varied by coating times and Si-$TiO_2$ films were optically and electrically analyzed. As a result, 6 times screen printed Si-$TiO_2$ film had the best performance with the smallest internal impedance and the highest photon to current efficiency.