Copper manganite thin films were fabricated on $SiN_x/Si$ substrate by metal organic decomposition (MOD) process. They were burned-out at $400^{circ}C$ and annealed at various temperatures ($400{sim}800^{circ}C$) for 1h in ambient atmosphere. Their micro-structure and negative temperature coefficient of resistance (NTCR) characteristics were analyzed for micro-bolometer application. The copper manganite film with a cubic spinel structure was well developed at $500^{circ}C$ which confirmed by XRD and HRTEM analysis. It showed a low resistivity ($47.5{Omega}{cdot}cm$) at room temperature and high NTCR characteristics of $-4.12%/^{circ}C$ and $-2.15%/^{circ}C$ at room temperature and $85^{circ}C$, implying a good thin film for micro-bolometer application. Furthermore, its crystallinity was enhanced with increasing temperature to $600^{circ}C$. However, the appearance of secondary phase at temperatures higher than $600^{circ}C$ lead to deteriorate the NTCR characteristics.