- 3D 웨이퍼 전자접합을 위한 관통 비아홀의 충전 기술 동향
- ㆍ 저자명
- 고영기,고용호,방정환,이창우,Ko. Young-Ki,Ko. Yong-Ho,Bang. Jung-Hwan,Lee. Chang-Woo
- ㆍ 간행물명
- Journal of welding and joining
- ㆍ 권/호정보
- 2014년|32권 3호|pp.19-26 (8 pages)
- ㆍ 발행정보
- 대한용접접합학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
Through Silicon Via (TSV) technology is the shortest interconnection technology which is compared with conventional wire bonding interconnection technology. Recently, this technology has been also noticed for the miniaturization of electronic devices, multi-functional and high performance. The short interconnection length of TSV achieve can implement a high density and power efficiency. Among the TSV technology, TSV filling process is important technology because the cost of TSV technology is depended on the filling process time and reliability. Various filling methods have been developed like as Cu electroplating method, molten solder insert method and Ti/W deposition method. In this paper, various TSV filling methods were introduced and each filling materials were discussed.