$Al_2O_3$ films on silicon carbide were fabricated by Aerosol deposition with annealing temperature at $800^{circ}C$ and $1,000^{circ}C$. The effect of thermal treatment on physical properties of $Al_2O_3$ thin films has been investigated by XRD (X-ray diffraction), AFM (atomic force microscope), SEM (scanning electron microscope), and AES (auger electron spectroscopy). Also electrical properties have been investigated by Keithley 4,200 semiconductor parameter analyzer to explain the interface trapped charge density ($D_{it}$), flatband voltage ($V_{FB}$) and leakage current ($I_o$). $Al_2O_3$ films become crystallized with increasing temperature by calculating full width at half maximum (FWHM) of diffraction peaks, also surface morphology is observed by topography measurement in non-contact mode AFM. $D_{it}$ was $2.26{ imes}10^{-12}eV^{-1}.cm^{-2}$ at $800^{circ}C$ annealed sample, which is the lowest value in all samples. Also the sample annealed at $800^{circ}C$ has the lowest leakage current of $4.89{ imes}10^{-13}A$.