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IGBT 전력반도체 모듈 패키지의 방열 기술
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  • IGBT 전력반도체 모듈 패키지의 방열 기술
저자명
서일웅,정훈선,이영호,김영훈,좌성훈,Suh. Il-Woong,Jung. Hoon-Sun,Lee. Young-Ho,Kim. Young-Hun,Choa. Sung-Hoon
간행물명
마이크로전자 및 패키징 학회지
권/호정보
2014년|21권 3호|pp.7-17 (11 pages)
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한국마이크로전자및패키징학회
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

Power electronics modules are semiconductor components that are widely used in airplanes, trains, automobiles, and energy generation and conversion facilities. In particular, insulated gate bipolar transistors(IGBT) have been widely utilized in high power and fast switching applications for power management including power supplies, uninterruptible power systems, and AC/DC converters. In these days, IGBT are the predominant power semiconductors for high current applications in electrical and hybrid vehicles application. In these application environments, the physical conditions are often severe with strong electric currents, high voltage, high temperature, high humidity, and vibrations. Therefore, IGBT module packages involves a number of challenges for the design engineer in terms of reliability. Thermal and thermal-mechanical management are critical for power electronics modules. The failure mechanisms that limit the number of power cycles are caused by the coefficient of thermal expansion mismatch between the materials used in the IGBT modules. All interfaces in the module could be locations for potential failures. Therefore, a proper thermal design where the temperature does not exceed an allowable limit of the devices has been a key factor in developing IGBT modules. In this paper, we discussed the effects of various package materials on heat dissipation and thermal management, as well as recent technology of the new package materials.